Higher Through-Put（by 140% than conventional systems) 3 wafers batch processing availability in 6inch dia.
7 wafers batch processing availability in 4inch dia.
12 wafers batch processing availability in 3 inch dia.
29 wafers batch processing availability in 2 inch dia.
ICP with magnetic field(ISM *1), high density plasma source which has over 600 delivery record in compound semiconductor market is equipped. *1:ULVAC Patent No.3188353
Propriately Star electrode*2 which has self-cleaning function for deposited material from RF window is equipped. *2:ULVAC Patent No.3429391
High mentenancability, stability, reliability are achieved through re-deposition preventative designing.
Dry etching technology availability for various process application. (GaN, Sapphire, Metal, ITO, SiC, AlN, ZnO, 4 elements compound semiconductor materials, etc.)
Various Option availability
Dry etching of GaN, Sapphire, metal, ITO etc for LED product