The CMD Series are single-substrate CVD systems for deposition of silicon oxide and nitride films using SiH4 or TEOS. A high-frequency (27.12 MHz) power supply enables high-quality film deposition.
Improvements in the reaction chamber structure and gas supply system enable long-term stable deposition rates for TEOS(SiO2) films.
Unit drive systems can operate at higher temperatures than conventional process temperatures, and a new vacuum transfer robot has been developed to enable a stable transfer system.
Use of a high-frequency (27.12 MHz) power supply creates high-density plasma, for a high deposition rate.
Individual substrates can easily be managed using parameters such as deposition conditions.
A heated reaction gas path enables evacuation of all equipment (up to discharging unit) in gas state. Elimination of piping traps reduces by-product adhesion and maintenance time.
Low-temperature P-Si, α-Si TFTs
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