CME-200E/400 is the most suitable model in the PE-CVD series production system for deposition of Si films with application as Insulator or barrier layers.
High-density plasma process with high-frequency(27.12 MHz) power supply.
High-quality film using SiH4 precursor: SiO2, SiNx, SiON, a-Si, also for TEOS process for SiO2 film.
Chamber Cleaning with NF3+Ar plasma.
Supports the heater for low-temperature deposition of organic EL.
Substrate size up to 200 x 200mm for CME-200E, Max. 300 x 400mm for CME-400.
LED, LD, High-speed device